onsemi Single FETs, MOSFETs UF3C120040K4S

The UF3C120040K4S is a silicon carbide cascode JFET power switch in a TO-247-4 package measuring 15.90 x 20.96 x 5.03 mm, designed for high-efficiency switching in applications such as EV charging, PV inverters, and motor drives. It features a 1200 V drain-source voltage rating, a typical on-resistance of 35 mΩ, and a continuous drain current of 65 A at 25 °C. The device operates with a maximum junction temperature of 175 °C and has a thermal resistance junction-to-case of 0.27 to 0.35 °C/W. It exhibits low gate charge, minimal reverse recovery charge (358 nC), and is ESD protected with HBM Class 2. The part is Pb-free, halogen-free, and RoHS compliant.