onsemi Single Bipolar Transistors TN6714A

Description
Bipolar (BJT) Transistor NPN 30V 2A 1W Through Hole TO-226-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 30V 2A 1W Through Hole TO-226-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - TN6714A-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
TN6714A-ND
Single Bipolar Transistors TN6714A-ND
Bipolar (BJT) Transistor NPN 30V 2A 1W Through Hole TO-226-3

Bipolar (BJT) Transistor NPN 30V 2A 1W Through Hole TO-226-3

Buy Now Datasheet
 - TN6714A - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 2A, 30V, NPN, TO-226

Small Signal Bipolar Transistor, 2A, 30V, NPN, TO-226

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - TN6714A - 1110816-TN6714A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - TN6714A
1110816-TN6714A
TRANSISTORS - Transistors (BJT) - Single - TN6714A 1110816-TN6714A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1110816-TN6714A Packaging: Bulk Mounting: Through Hole Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-226 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 500mV @ 100mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 50 @ 1A, 1V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Quantity per package: 1,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1110816-TN6714A
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-226
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 500mV @ 100mA, 1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 50 @ 1A, 1V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 1,500

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - TN6714A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
TN6714A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) TN6714A
TRANS NPN 30V 2A TO226-3

TRANS NPN 30V 2A TO226-3

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number TN6714A-ND TN6714A 1110816-TN6714A TN6714A
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - TN6714A Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN
Unlock Full Specs
to access all available technical data