onsemi Single Bipolar Transistors TIP33C

NPN silicon power transistor designed for general-purpose amplifier and switching applications, housed in a TO-247 case with a maximum collector current of 10 A, collector-emitter voltage rating of 100 V, and power dissipation of 80 W at 25°C. Thermal resistance from junction to case is 1.56 °C/W. The device meets UL 94 V-0 flammability standard and is Pb-free. ESD ratings are >400 V (machine model) and >8000 V (human body model).