onsemi TRANSISTORS - Transistors (BJT) - Single - TIP112G TIP112G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 212837-TIP112G Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 2.5V @ 8mA, 2A Collector Cut-off Current(Max): 2mA Typical Gain (hFE) (Min): 1000 @ 1A, 4V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 212837-TIP112G Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 2.5V @ 8mA, 2A Collector Cut-off Current(Max): 2mA Typical Gain (hFE) (Min): 1000 @ 1A, 4V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - TIP112G - 212837-TIP112G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - TIP112G
212837-TIP112G
TRANSISTORS - Transistors (BJT) - Single - TIP112G 212837-TIP112G
Manufacturer: ON Semiconductor Win Source Part Number: 212837-TIP112G Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 2.5V @ 8mA, 2A Collector Cut-off Current(Max): 2mA Typical Gain (hFE) (Min): 1000 @ 1A, 4V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 212837-TIP112G
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 2.5V @ 8mA, 2A
Collector Cut-off Current(Max): 2mA
Typical Gain (hFE) (Min): 1000 @ 1A, 4V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single Bipolar Transistors - TIP112GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
TIP112GOS-ND
Single Bipolar Transistors TIP112GOS-ND
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 2W Through Hole TO-220

Bipolar (BJT) Transistor NPN - Darlington 100V 2A 2W Through Hole TO-220

Buy Now Datasheet
Transistor - 18731528 - Radwell International
Willingboro, NJ, United States
Transistor
18731528
Transistor 18731528
TRANSISTOR, DARLINGTON, NPN, BIPOLAR, 100V, 2A, 2W, TO-220-3. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, DARLINGTON, NPN, BIPOLAR, 100V, 2A, 2W, TO-220-3. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - TIP112G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
TIP112G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) TIP112G
TRANS NPN DARL 100V 2A TO220

TRANS NPN DARL 100V 2A TO220

Supplier's Site
Darlington Transistors 2A 100V Bipolar Power NPN - 598-TIP112G - Utmel Electronic Limited
Hong Kong, China
Darlington Transistors 2A 100V Bipolar Power NPN
598-TIP112G
Darlington Transistors 2A 100V Bipolar Power NPN 598-TIP112G
Darlington Transistors 2A 100V Bipolar Power NPN

Darlington Transistors 2A 100V Bipolar Power NPN

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 212837-TIP112G TIP112GOS-ND 18731528 TIP112G 598-TIP112G
Product Name TRANSISTORS - Transistors (BJT) - Single - TIP112G Single Bipolar Transistors Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Darlington Transistors 2A 100V Bipolar Power NPN
Polarity NPN; NPN - Darlington NPN NPN; NPN
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3
Packing Method Tube; Tube Tube; Tube
IC(max) 2000 milliamps 2000 milliamps
VCEO 100 volts 100 volts
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