onsemi TRANSISTORS - Transistors (BJT) - Single - TIP106G TIP106G

Manufacturer: ON Semiconductor
Win Source Part Number: 119513-TIP106G
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 2.5V @ 80mA, 8A
Collector Cut-off Current(Max): 50μA
Typical Gain (hFE) (Min): 1000 @ 3A, 4V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

Bipolar (BJT) Transistor PNP - Darlington 80V 8A 2W Through Hole TO-220

8.0 A, 100 V NPN Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE Product overview: TIP106G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8.0 A, 100 V, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 8.0 A, 100 V, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-TIP106G can be used for catalog matching and distributor lookup.