The TIL113M is a 6-pin DIP general purpose photodarlington optocoupler featuring a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. It has an input-to-output isolation voltage of 4,170 VAC RMS for 1 minute and a maximum working insulation voltage of 850 V peak. The device meets DIN EN/IEC 60747-5-5 safety standards with a comparative tracking index of 175, external creepage and clearance of at least 7 mm, and through-insulation thickness of at least 0.5 mm. The continuous collector current is rated at 150 mA, and the collector-emitter breakdown voltage is 25 V minimum for this variant. The current transfer ratio is specified at 30 mA to 300 mA for an input current of 10 mA and collector-emitter voltage of 1 V. Operating temperature ranges from -40 °C to 100 °C.
6-pin DIP Photodarlington Output Optocoupler, 1000-BLKBG Product overview: TIL113M from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include transistor, BJT, switching, amplification, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-TIL113M can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-TIL113M |
| Product Name | DIP Bipolar Transistor |
| IC(max) | 150 milliamps |
