The TIL111M is a general purpose optocoupler consisting of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual-in-line package measuring 8.51 mm by 6.35 mm with 2.54 mm pin spacing. It has a minimum current transfer ratio of 20% at an input current of 10 mA and a collector-emitter voltage of 10 V. The device supports a maximum working insulation voltage of 850 V peak and meets UL1577 with a 4,170 VAC RMS isolation rating for one minute. Operating temperature ranges from -40°C to 100°C, and the collector-emitter voltage is rated at 30 V. Input forward voltage is 1.50 V maximum at 10 mA, and the output power dissipation is limited to 800 mW. The package complies with DIN EN/IEC60747-5-5 for safety insulation.
Transistor Output Optocouplers 6-Pin DIP Optocplr Transistor Output Product overview: TIL111M from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include transistor, BJT, switching, amplification, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-TIL111M can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-TIL111M |
| Product Name | DIP Bipolar Transistor |
| Package Type | Bulk |
