onsemi TF412T5G

Description
TF412 - Small Signal Field-Effect Transistor
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Description
TF412 - Small Signal Field-Effect Transistor
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Datasheet
Datasheet Summary
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TF412T5G is an N-channel JFET transistor in the SOT-883 package, measuring 1.0 mm x 0.6 mm, designed for low-frequency amplifier and impedance conversion applications. It features a drain-to-source voltage rating of 30 V, a drain current of up to 10 mA, and a gate-to-source leakage current of no more than -10 nA at -20 V. The device exhibits a typical input capacitance of 4 pF and a forward transfer admittance between 3.0 and 5.0 mS. The cutoff voltage ranges from -0.60 V to -1.5 V, with a drain current at zero gate bias between 1.2 and 3.0 mA. The junction temperature is rated to 50 °C, and the part is halogen-free compliant.

Datasheet Summary
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TF412T5G is an N-channel JFET transistor in the SOT-883 package, measuring 1.0 mm x 0.6 mm, designed for low-frequency amplifier and impedance conversion applications. It features a drain-to-source voltage rating of 30 V, a drain current of up to 10 mA, and a gate-to-source leakage current of no more than -10 nA at -20 V. The device exhibits a typical input capacitance of 4 pF and a forward transfer admittance between 3.0 and 5.0 mS. The cutoff voltage ranges from -0.60 V to -1.5 V, with a drain current at zero gate bias between 1.2 and 3.0 mA. The junction temperature is rated to 50 °C, and the part is halogen-free compliant.

Suppliers

Company
Product
Description
Supplier Links
 - TF412T5G - Rochester Electronics
Newburyport, MA, United States
TF412 - Small Signal Field-Effect Transistor

TF412 - Small Signal Field-Effect Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF MOSFET Transistors
Product Number TF412T5G
Package Type XFN
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