onsemi JFETs (Junction Field Effect) - TF262TH-4-TL-H TF262TH-4-TL-H

Description
Manufacturer: ON Semiconductor Win Source Part Number: 803225-TF262TH-4-TL- H Packaging: Reel Mounting Style: SMD FET Type: N-Channel Power - Max: 100mW Current Drain (Id) - Max: 1mA Part Status: Obsolete (End Of Life) Supplier Device Package: VTFP Temperature Range - Operating: 150°C Manufacturer Package: 3-SMD, Flat Lead Popularity: Medium Fake Threat In the Open Market: 84 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 8,000 MSL Level: 1 (Unlimited) Input Capacitance (Ciss) (Maximum) at Vds: 3.5pF at 2V Current - Drain (Idss) at Vds (Vgs=0): 140μA at 2V Voltage - Cutoff (VGS off) at Id: 200mV at 1μA
Request a Quote
Description
Manufacturer: ON Semiconductor Win Source Part Number: 803225-TF262TH-4-TL- H Packaging: Reel Mounting Style: SMD FET Type: N-Channel Power - Max: 100mW Current Drain (Id) - Max: 1mA Part Status: Obsolete (End Of Life) Supplier Device Package: VTFP Temperature Range - Operating: 150°C Manufacturer Package: 3-SMD, Flat Lead Popularity: Medium Fake Threat In the Open Market: 84 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 8,000 MSL Level: 1 (Unlimited) Input Capacitance (Ciss) (Maximum) at Vds: 3.5pF at 2V Current - Drain (Idss) at Vds (Vgs=0): 140μA at 2V Voltage - Cutoff (VGS off) at Id: 200mV at 1μA
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
JFETs (Junction Field Effect) - TF262TH-4-TL-H - 803225-TF262TH-4-TL-H - Win Source Electronics
Laguna Hills, CA, United States
JFETs (Junction Field Effect) - TF262TH-4-TL-H
803225-TF262TH-4-TL-H
JFETs (Junction Field Effect) - TF262TH-4-TL-H 803225-TF262TH-4-TL-H
Manufacturer: ON Semiconductor Win Source Part Number: 803225-TF262TH-4-TL- H Packaging: Reel Mounting Style: SMD FET Type: N-Channel Power - Max: 100mW Current Drain (Id) - Max: 1mA Part Status: Obsolete (End Of Life) Supplier Device Package: VTFP Temperature Range - Operating: 150°C Manufacturer Package: 3-SMD, Flat Lead Popularity: Medium Fake Threat In the Open Market: 84 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 8,000 MSL Level: 1 (Unlimited) Input Capacitance (Ciss) (Maximum) at Vds: 3.5pF at 2V Current - Drain (Idss) at Vds (Vgs=0): 140μA at 2V Voltage - Cutoff (VGS off) at Id: 200mV at 1μA

Manufacturer: ON Semiconductor
Win Source Part Number: 803225-TF262TH-4-TL-H
Packaging: Reel
Mounting Style: SMD
FET Type: N-Channel
Power - Max: 100mW
Current Drain (Id) - Max: 1mA
Part Status: Obsolete (End Of Life)
Supplier Device Package: VTFP
Temperature Range - Operating: 150°C
Manufacturer Package: 3-SMD, Flat Lead
Popularity: Medium
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 8,000
MSL Level: 1 (Unlimited)
Input Capacitance (Ciss) (Maximum) at Vds: 3.5pF at 2V
Current - Drain (Idss) at Vds (Vgs=0): 140μA at 2V
Voltage - Cutoff (VGS off) at Id: 200mV at 1μA

Buy Now
Futian, China
Discrete Semiconductor Products - Transistors - JFETs
TF262TH-4-TL-H
Discrete Semiconductor Products - Transistors - JFETs TF262TH-4-TL-H
JFET N-CH 1MA VTFP

JFET N-CH 1MA VTFP

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number 803225-TF262TH-4-TL-H TF262TH-4-TL-H
Product Name JFETs (Junction Field Effect) - TF262TH-4-TL-H Discrete Semiconductor Products - Transistors - JFETs
Transistor Type JFET
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2N3904TAR - 906251-2N3904TAR - Win Source Electronics
Specs
Transistor Type Bipolar RF
Polarity NPN
Package Type TO-92; SOT3; TO-92-3
View Details
Single FETs, MOSFETs - AUIRFS3307Z - ODG (Origin Data Global)
Infineon Technologies AG
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 75 volts
View Details
5 suppliers