onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors SZNSQA6V8AW5T2G

Description
Mfr: TE Connectivity Aerospace, Defense and Marine Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Bipolar RF Transistors Packaging: Bulk Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 6.8V Voltage - Breakdown (Min): 95V Voltage - Clamping (Max) @ Ipp: 137V Current - Peak Pulse (10/1000µs): 10A
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Description
Mfr: TE Connectivity Aerospace, Defense and Marine Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Bipolar RF Transistors Packaging: Bulk Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 6.8V Voltage - Breakdown (Min): 95V Voltage - Clamping (Max) @ Ipp: 137V Current - Peak Pulse (10/1000µs): 10A
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Datasheet
Datasheet Summary
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The NSQA6V8AW5T2G is a single-line CAN/LIN bus protector with four unidirectional ESD protection diodes in an SC-88A SMT package. It provides transient voltage suppression with a working peak reverse voltage of 5 V, a clamping voltage of 13 V at 1.6 A peak pulse current, and a junction capacitance of 12 to 15 pF at 0 V bias. The device meets IEC 61000-4-2 Level 4 ESD protection standards and MIL-STD-883C Method 3015-6 Class 3, and is RoHS compliant. Operating junction temperature ranges from -40°C to +125°C, with a storage temperature range of -55°C to +150°C.

Datasheet Summary
Powered by GS/AI

The NSQA6V8AW5T2G is a single-line CAN/LIN bus protector with four unidirectional ESD protection diodes in an SC-88A SMT package. It provides transient voltage suppression with a working peak reverse voltage of 5 V, a clamping voltage of 13 V at 1.6 A peak pulse current, and a junction capacitance of 12 to 15 pF at 0 V bias. The device meets IEC 61000-4-2 Level 4 ESD protection standards and MIL-STD-883C Method 3015-6 Class 3, and is RoHS compliant. Operating junction temperature ranges from -40°C to +125°C, with a storage temperature range of -55°C to +150°C.

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr: TE Connectivity Aerospace, Defense and Marine Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Bipolar RF Transistors Packaging: Bulk Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 6.8V Voltage - Breakdown (Min): 95V Voltage - Clamping (Max) @ Ipp: 137V Current - Peak Pulse (10/1000µs): 10A

Mfr: TE Connectivity Aerospace, Defense and Marine
Category: Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Bipolar RF Transistors
Packaging: Bulk
Part Status: Obsolete
Type: Header, Male Pins, Shrouded (4 Side)
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 6.8V
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Current - Peak Pulse (10/1000µs): 10A

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Package Type SOT3
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