onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors SZNSQA6V8AW5T2G

Description
Mfr: TE Connectivity Aerospace, Defense and Marine Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Bipolar RF Transistors Packaging: Bulk Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 6.8V Voltage - Breakdown (Min): 95V Voltage - Clamping (Max) @ Ipp: 137V Current - Peak Pulse (10/1000µs): 10A
Request a Quote Datasheet
Description
Mfr: TE Connectivity Aerospace, Defense and Marine Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Bipolar RF Transistors Packaging: Bulk Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 6.8V Voltage - Breakdown (Min): 95V Voltage - Clamping (Max) @ Ipp: 137V Current - Peak Pulse (10/1000µs): 10A
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr: TE Connectivity Aerospace, Defense and Marine Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Bipolar RF Transistors Packaging: Bulk Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 6.8V Voltage - Breakdown (Min): 95V Voltage - Clamping (Max) @ Ipp: 137V Current - Peak Pulse (10/1000µs): 10A

Mfr: TE Connectivity Aerospace, Defense and Marine
Category: Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Bipolar RF Transistors
Packaging: Bulk
Part Status: Obsolete
Type: Header, Male Pins, Shrouded (4 Side)
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 6.8V
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Current - Peak Pulse (10/1000µs): 10A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Package Type SOT3
Unlock Full Specs
to access all available technical data

Similar Products

RF FETs, MOSFETs - 2312-QPD0020TR7TR-ND - DigiKey
Specs
Package Type 20-VFQFN Exposed Pad
View Details
2 suppliers
SMALL SIGNAL BIPOLAR TRANSISTOR - 699-2N4401 - Utmel Electronic Limited
Specs
Transistor Type Bipolar RF
Polarity NPN; NPN
Transistor Technology / Material SILICON
View Details
Bipolar Transistors - 1658814 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity NPN
Package Type Sot-523 (sc-89)
View Details
N-Channel 21A 500V 0.26ohm MOSFET Transistor - 288-2SK3522-01 - ERSAELECTRONICS PTE. LTD.
Specs
Transistor Type MOSFET
View Details
3 suppliers