onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SVD5867NLT4G

Description
Win Source Part Number: 972370-SVD5867NLT4G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.3W (Ta), 43W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3 Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 2156-SVD5867NLT4G-OS ,NVD5867NLT4GOSCT,NV D5867NLT4GOSDKR,SVD5 867NLT4GOSTR,SVD5867 NLT4GOSDKR,SVD5867NL T4GOSCT,NVD5867NLT4G OSCT-ND,NVD5867NLT4G OSDKR-ND,ONSONSSVD58 67NLT4G Base Product Number: SVD5867 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 972370-SVD5867NLT4G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.3W (Ta), 43W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3 Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 2156-SVD5867NLT4G-OS ,NVD5867NLT4GOSCT,NV D5867NLT4GOSDKR,SVD5 867NLT4GOSTR,SVD5867 NLT4GOSDKR,SVD5867NL T4GOSCT,NVD5867NLT4G OSCT-ND,NVD5867NLT4G OSDKR-ND,ONSONSSVD58 67NLT4G Base Product Number: SVD5867 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 972370-SVD5867NLT4G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
972370-SVD5867NLT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 972370-SVD5867NLT4G
Win Source Part Number: 972370-SVD5867NLT4G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.3W (Ta), 43W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3 Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 2156-SVD5867NLT4G-OS ,NVD5867NLT4GOSCT,NV D5867NLT4GOSDKR,SVD5 867NLT4GOSTR,SVD5867 NLT4GOSDKR,SVD5867NL T4GOSCT,NVD5867NLT4G OSCT-ND,NVD5867NLT4G OSDKR-ND,ONSONSSVD58 67NLT4G Base Product Number: SVD5867 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 972370-SVD5867NLT4G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 2156-SVD5867NLT4G-OS,NVD5867NLT4GOSCT,NVD5867NLT4GOSDKR,SVD5867NLT4GOSTR,SVD5867NLT4GOSDKR,SVD5867NLT4GOSCT,NVD5867NLT4GOSCT-ND,NVD5867NLT4GOSDKR-ND,ONSONSSVD5867NLT4G
Base Product Number: SVD5867
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - 488-SVD5867NLT4GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-SVD5867NLT4GCT-ND
Single FETs, MOSFETs 488-SVD5867NLT4GCT-ND
N-Channel 60V 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3

N-Channel 60V 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3

Buy Now Datasheet
Single FETs, MOSFETs - 488-SVD5867NLT4GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-SVD5867NLT4GTR-ND
Single FETs, MOSFETs 488-SVD5867NLT4GTR-ND
N-Channel 60V 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3

N-Channel 60V 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3

Buy Now Datasheet
Single FETs, MOSFETs - 488-SVD5867NLT4GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-SVD5867NLT4GDKR-ND
Single FETs, MOSFETs 488-SVD5867NLT4GDKR-ND
N-Channel 60V 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3

N-Channel 60V 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3

Buy Now Datasheet
Singapore
N-Channel 60V 22A MOSFET Transistor
278-SVD5867NLT4G
N-Channel 60V 22A MOSFET Transistor 278-SVD5867NLT4G
Single N-Channel Power MOSFET 60V, 22A, 39mΩ, 2500-REEL Product overview: SVD5867NLT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SVD5867NLT4G can be used for catalog matching and distributor lookup.

Single N-Channel Power MOSFET 60V, 22A, 39mΩ, 2500-REEL Product overview: SVD5867NLT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SVD5867NLT4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 60V, 22A, To-252; Transistor Polarity Onsemi - 02AC3818 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 22A, To-252; Transistor Polarity Onsemi
02AC3818
Mosfet, N-Ch, 60V, 22A, To-252; Transistor Polarity Onsemi 02AC3818
MOSFET, N-CH, 60V, 22A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 60V, 22A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
Single FETs, MOSFETs - SVD5867NLT4G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SVD5867NLT4G
Single FETs, MOSFETs SVD5867NLT4G
MOSFET N-CH 60V 22A DPAK-3

MOSFET N-CH 60V 22A DPAK-3

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SVD5867NLT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SVD5867NLT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SVD5867NLT4G
MOSFET N-CH 60V 22A DPAK-3

MOSFET N-CH 60V 22A DPAK-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NFET DPAK 60V 18A 43MOHM

MOSFET NFET DPAK 60V 18A 43MOHM

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 972370-SVD5867NLT4G 488-SVD5867NLT4GCT-ND 278-SVD5867NLT4G 02AC3818 SVD5867NLT4G SVD5867NLT4G SVD5867NLT4G
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs N-Channel 60V 22A MOSFET Transistor Mosfet, N-Ch, 60V, 22A, To-252; Transistor Polarity Onsemi Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
PD 3300 to 43000 milliwatts 3300 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Grade / Operating Range Automotive
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