Win Source Part Number: 972370-SVD5867NLT4G
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 2156-SVD5867NLT4G-OS
Base Product Number: SVD5867
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Single N-Channel Power MOSFET 60V, 22A, 39mΩ, 2500-REEL Product overview: SVD5867NLT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 22A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 22A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SVD5867NLT4G can be used for catalog matching and distributor lookup.
N-Channel 60V 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3
N-Channel 60V 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3
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MOSFET N-CH 60V 22A DPAK-3
MOSFET NFET DPAK 60V 18A 43MOHM
MOSFET, N-CH, 60V, 22A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 60V 22A DPAK-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 972370-SVD5867NLT4G | 278-SVD5867NLT4G | 488-SVD5867NLT4GCT-ND | SVD5867NLT4G | SVD5867NLT4G | 02AC3818 | SVD5867NLT4G |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel 60V 22A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 22A, To-252; Transistor Polarity Onsemi | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 3300 to 43000 milliwatts | 3300 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | ||
| Transistor Grade / Operating Range | Automotive |
