Win Source Part Number: 981319-SURS8120T3G-I
Category: Discrete Semiconductor Products>Diodes - Rectifiers - Single
Series: Automotive, AEC-Q101
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.10.0080
Mfr: onsemi
Other Names: 488-SURS8120T3G-IR02
Base Product Number: SURS8120
DIODE GEN PURP 200V 1A SMB Product overview: SURS8120T3G-IR02 from onsemi is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 1A. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 200V, 1A, Diode and Rectifier, Single Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 280-SURS8120T3G-IR02
DIODE GEN PURP 200V 1A SMB
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Diodes | Rectifiers | Rectifiers |
| Product Number | 981319-SURS8120T3G-IR02 | 280-SURS8120T3G-IR02 | SURS8120T3G-IR02 |
| Product Name | Discrete Semiconductor Products - Diodes - Rectifiers - Single | 200V 1A Diode and Rectifier | Discrete Semiconductor Products - Diodes - Rectifiers |
| Diode Type | Standard | ||
| VF | 0.8750 volts | 0.8750 volts | |
| VR | 200 volts | ||
| IR | 0.0020 mA | ||
| trr | 35 ns |