onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5406NT4G STD5406NT4G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 031149-STD5406NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 12.2A (Ta), 70A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2500pF @ 32V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 031149-STD5406NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 12.2A (Ta), 70A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2500pF @ 32V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5406NT4G - 031149-STD5406NT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5406NT4G
031149-STD5406NT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5406NT4G 031149-STD5406NT4G
Manufacturer: ON Semiconductor Win Source Part Number: 031149-STD5406NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 12.2A (Ta), 70A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2500pF @ 32V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 031149-STD5406NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 12.2A (Ta), 70A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2500pF @ 32V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 488-STD5406NT4GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-STD5406NT4GTR-ND
Single FETs, MOSFETs 488-STD5406NT4GTR-ND
MOSFET N-CH 40V 12.2A DPAK

MOSFET N-CH 40V 12.2A DPAK

Buy Now Datasheet
Single FETs, MOSFETs - STD5406NT4G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD5406NT4G
Single FETs, MOSFETs STD5406NT4G
MOSFET N-CH 40V 12.2A DPAK

MOSFET N-CH 40V 12.2A DPAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET NFET 40V SPCL TR

MOSFET NFET 40V SPCL TR

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD5406NT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD5406NT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD5406NT4G
MOSFET N-CH 40V 12.2A DPAK

MOSFET N-CH 40V 12.2A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 031149-STD5406NT4G 488-STD5406NT4GTR-ND STD5406NT4G STD5406NT4G STD5406NT4G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5406NT4G Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 40 volts 40 volts
PD 3000 to 100000 milliwatts 3000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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