onsemi Single FETs, MOSFETs SSU1N60BTU-WS

Description
N-Channel 600V 900mA (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK
Request a Quote Datasheet
Description
N-Channel 600V 900mA (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SSU1N60BTU-WS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SSU1N60BTU-WS-ND
Single FETs, MOSFETs SSU1N60BTU-WS-ND
N-Channel 600V 900mA (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK

N-Channel 600V 900mA (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SSU1N60BTU-WS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SSU1N60BTU-WS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SSU1N60BTU-WS
MOSFET N-CH 600V 900MA IPAK

MOSFET N-CH 600V 900MA IPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 0.9A 12Ohm

MOSFET N-Ch 600V 0.9A 12Ohm

Buy Now
MOSFET N-CH 600V 0.9A IPAK - 598-SSU1N60BTU-WS - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 0.9A IPAK
598-SSU1N60BTU-WS
MOSFET N-CH 600V 0.9A IPAK 598-SSU1N60BTU-WS
MOSFET N-CH 600V 0.9A IPAK

MOSFET N-CH 600V 0.9A IPAK

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SSU1N60BTU-WS-ND SSU1N60BTU-WS SSU1N60BTU-WS 598-SSU1N60BTU-WS
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-CH 600V 0.9A IPAK
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SB1134S - 906320-2SB1134S - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF1018ES - 1020697-AUIRF1018ES - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 110000 milliwatts
View Details
5 suppliers
RF Power Transistor - 1099947 - Richardson RFPD
Specs
Transistor Technology / Material GaN
Power Gain 18 dB
Operating Frequency 0.0 to 18000 MHz
View Details