onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSU1N50BTU SSU1N50BTU

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1102456-SSU1N50BTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251 (IPAK)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 520V
Continuous Drain Current at 25°C: 1.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 340pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 5.3 Ohm @ 650mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 5,040

520V N-Channel MOSFET, 5040-TUBE Product overview: SSU1N50BTU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 520V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 520V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SSU1N50BTU can be used for catalog matching and distributor lookup.

N-Channel 520V 1.3A (Tc) 2.5W (Ta), 26W (Tc) Through Hole I-PAK