MOSFET 2N-CH 60V 3.3A 8-SOIC Product overview: SSD2025TF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.3A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SSD2025TF can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 60V 3.3A 2W Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1102238-SSD2025TF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 30nC @ 10V
Maximum Rds On at Id,Vgs: 100 mOhm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
MOSFET 2N-CH 60V 3.3A 8SOIC
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-SSD2025TF | SSD2025TF-ND | 1102238-SSD2025TF | SSD2025TF |
| Product Name | 60V 3.3A SOIC MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSD2025TF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| PD | 2000 milliwatts | 2000 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |