onsemi Bipolar RF Transistors SS9018FBU

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3

Win Source Part Number: 1278694-SS9018FBU
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Package: Bulk
Standard Package: 10,000
Power - Max: 400mW
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 50mA
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 54 @ 1mA, 5V
Frequency - Transition: 1.1GHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: onsemi
Base Product Number: SS9018
Product Status: Obsolete

NPN RF Transistor, 1.1GHz, 15V VCEO, 50mA IC, TO-92 Product overview: SS9018FBU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.1GHz, 15V, 50mA. Search-friendly keywords include transistor, BJT, switching, amplification, 1.1GHz, 15V, 50mA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-SS9018FBU can be used for catalog matching and distributor lookup.

RF 0.05A, VERY HIGH FREQUENCY BA