onsemi Single Bipolar Transistors SS9012GTA

Description
Bipolar (BJT) Transistor PNP 20V 500mA 625mW Through Hole TO-92-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 20V 500mA 625mW Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - SS9012GTATB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
SS9012GTATB-ND
Single Bipolar Transistors SS9012GTATB-ND
Bipolar (BJT) Transistor PNP 20V 500mA 625mW Through Hole TO-92-3

Bipolar (BJT) Transistor PNP 20V 500mA 625mW Through Hole TO-92-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1278647-SS9012GTA - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1278647-SS9012GTA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1278647-SS9012GTA
Win Source Part Number: 1278647-SS9012GTA Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Cut Tape (CT),Tape & Box (TB) Standard Package: 2,000 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 500 mA Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 112 @ 50mA, 1V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92-3 Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: onsemi Other Names: SS9012GTA,SS9012GTAC T,SS9012GTATB Base Product Number: SS9012 Product Status: Obsolete

Win Source Part Number: 1278647-SS9012GTA
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Cut Tape (CT),Tape & Box (TB)
Standard Package: 2,000
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 500 mA
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 112 @ 50mA, 1V
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: onsemi
Other Names: SS9012GTA,SS9012GTACT,SS9012GTATB
Base Product Number: SS9012
Product Status: Obsolete

Buy Now Datasheet
 - SS9012GTA - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
 - SS9012GTA - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SS9012GTA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
SS9012GTA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) SS9012GTA
TRANS PNP 20V 0.5A TO92-3

TRANS PNP 20V 0.5A TO92-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors Bipolar RF Transistors
Product Number SS9012GTATB-ND 1278647-SS9012GTA SS9012GTA SS9012GTA
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP
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