onsemi IGBT Modules SNXH225B95H4Q2F2PG

The SNXH225B95H4Q2F2PG is a high-density integrated power module combining IGBTs and anti-parallel diodes for use in solar inverters and UPS systems. It is packaged in a CASE 180AV housing measuring 93.00 mm by 47.00 mm by 12.00 mm with press-fit pins. The module features IGBTs rated for 950 V collector-emitter voltage and 65 A continuous current, with a maximum junction temperature of 150°C. It includes a 1200 V silicon carbide Schottky diode rated for 42 A DC forward current and 175°C maximum junction temperature. The device meets an isolation test voltage of 3400 Vrms, a creepage distance of 12.7 mm, and a comparative tracking index greater than 600. Thermal resistance from junction to heatsink is specified as 0.706 °C/W for the IGBTs and 1.070 °C/W for the SiC diode. The module is Pb-free and shipped in blister trays.