onsemi SNXH150B120H3Q2F2PG-N

Description
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
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Description
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
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Datasheet
Datasheet Summary
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The SNXH150B120H3Q2F2PG-N is a Q2BOOST module integrating 1200V IGBTs with anti-parallel diodes for high-density power conversion in solar inverters and UPS systems. It is housed in a CASE 180AL package with press-fit pins. Each IGBT supports a continuous collector current of 80 A at 80°C case temperature and a pulsed current of 309 A, with a maximum junction temperature of 175°C. The module includes three 1600V inverse diodes rated at 45 A DC and three 1200V silicon carbide Schottky diodes rated at 30 A DC. The insulation withstands 3000 Vrms for one second with a creepage distance of 12.7 mm. It meets RoHS standards and is Pb-free.

Datasheet Summary
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The SNXH150B120H3Q2F2PG-N is a Q2BOOST module integrating 1200V IGBTs with anti-parallel diodes for high-density power conversion in solar inverters and UPS systems. It is housed in a CASE 180AL package with press-fit pins. Each IGBT supports a continuous collector current of 80 A at 80°C case temperature and a pulsed current of 309 A, with a maximum junction temperature of 175°C. The module includes three 1600V inverse diodes rated at 45 A DC and three 1200V silicon carbide Schottky diodes rated at 30 A DC. The insulation withstands 3000 Vrms for one second with a creepage distance of 12.7 mm. It meets RoHS standards and is Pb-free.

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Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel

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Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number SNXH150B120H3Q2F2PG-N
Package Type PIM-35
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