onsemi Single Bipolar Transistors SNSS35200MR6T1G

Description
Bipolar (BJT) Transistor PNP 35V 2A 100MHz 625mW Surface Mount 6-TSOP
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Description
Bipolar (BJT) Transistor PNP 35V 2A 100MHz 625mW Surface Mount 6-TSOP
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - 488-SNSS35200MR6T1GTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-SNSS35200MR6T1GTR-ND
Single Bipolar Transistors 488-SNSS35200MR6T1GTR-ND
Bipolar (BJT) Transistor PNP 35V 2A 100MHz 625mW Surface Mount 6-TSOP

Bipolar (BJT) Transistor PNP 35V 2A 100MHz 625mW Surface Mount 6-TSOP

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Single Bipolar Transistors - 488-SNSS35200MR6T1GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-SNSS35200MR6T1GDKR-ND
Single Bipolar Transistors 488-SNSS35200MR6T1GDKR-ND
TRANS PNP 35V 2A 6-TSOP

TRANS PNP 35V 2A 6-TSOP

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Single Bipolar Transistors - 488-SNSS35200MR6T1GCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-SNSS35200MR6T1GCT-ND
Single Bipolar Transistors 488-SNSS35200MR6T1GCT-ND
TRANS PNP 35V 2A 6-TSOP

TRANS PNP 35V 2A 6-TSOP

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Singapore, Singapore
35 V 2.0 A Bipolar Transistor
276-SNSS35200MR6T1G
35 V 2.0 A Bipolar Transistor 276-SNSS35200MR6T1G
Low VCE(sat) Transistor, PNP, 35 V, 2.0 A, TSOP-6, 3000-REEL Product overview: SNSS35200MR6T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 35 V, 2.0 A. Search-friendly keywords include transistor, BJT, switching, amplification, 35 V, 2.0 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-SNSS35200MR6T1G can be used for catalog matching and distributor lookup.

Low VCE(sat) Transistor, PNP, 35 V, 2.0 A, TSOP-6, 3000-REEL Product overview: SNSS35200MR6T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 35 V, 2.0 A. Search-friendly keywords include transistor, BJT, switching, amplification, 35 V, 2.0 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-SNSS35200MR6T1G can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors (BJT) - Single - SNSS35200MR6T1G - 1101121-SNSS35200MR6T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - SNSS35200MR6T1G
1101121-SNSS35200MR6T1G
TRANSISTORS - Transistors (BJT) - Single - SNSS35200MR6T1G 1101121-SNSS35200MR6T1G
Manufacturer: ON Semiconductor Win Source Part Number: 1101121-SNSS35200MR6 T1G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Case / Package: 6-TSOP Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 35V Max Vce (sat): 310mV @ 20mA, 2A Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 100 @ 1.5A, 1.5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1101121-SNSS35200MR6T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: 6-TSOP
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 35V
Max Vce (sat): 310mV @ 20mA, 2A
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 100 @ 1.5A, 1.5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SNSS35200MR6T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
SNSS35200MR6T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) SNSS35200MR6T1G
TRANS PNP 35V 2A 6TSOP

TRANS PNP 35V 2A 6TSOP

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
SNSS35200MR6T1G
Bipolar Transistors - BJT SNSS35200MR6T1G
Bipolar Transistors - BJT SSP LOW VCES 30V NPN XTR

Bipolar Transistors - BJT SSP LOW VCES 30V NPN XTR

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Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 488-SNSS35200MR6T1GTR-ND 276-SNSS35200MR6T1G 1101121-SNSS35200MR6T1G SNSS35200MR6T1G SNSS35200MR6T1G
Product Name Single Bipolar Transistors 35 V 2.0 A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - SNSS35200MR6T1G Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity PNP PNP PNP; PNP
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; 6-TSOP
IC(max) 2000 milliamps 2000 milliamps
VCEO 35 volts 35 volts
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