onsemi SMUN5335DW1T2G-M02

Description
NPN and PNP Transistors with monolithic bias resistors
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Description
NPN and PNP Transistors with monolithic bias resistors
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Datasheet
Datasheet Summary
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The SMUN5335DW1T2G-M02 is part of a series of complementary bias resistor transistors integrating NPN and PNP transistors with monolithic resistor networks (R1 = 2.2 kΩ, R2 = 47 kΩ) in a SOT-363 package. It is designed to reduce component count and board space by replacing discrete transistors and external bias resistors. The device has a collector-emitter voltage rating of 50 V, a continuous collector current of 100 mA, and a junction temperature range of −55 to +150 °C. It is AEC-Q101 qualified and RoHS compliant, with a total device dissipation of 250 mW at 25°C when both junctions are heated. The series is Pb-free, halogen-free, and suitable for automotive applications.

Datasheet Summary
Powered by GS/AI

The SMUN5335DW1T2G-M02 is part of a series of complementary bias resistor transistors integrating NPN and PNP transistors with monolithic resistor networks (R1 = 2.2 kΩ, R2 = 47 kΩ) in a SOT-363 package. It is designed to reduce component count and board space by replacing discrete transistors and external bias resistors. The device has a collector-emitter voltage rating of 50 V, a continuous collector current of 100 mA, and a junction temperature range of −55 to +150 °C. It is AEC-Q101 qualified and RoHS compliant, with a total device dissipation of 250 mW at 25°C when both junctions are heated. The series is Pb-free, halogen-free, and suitable for automotive applications.

Suppliers

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Description
Supplier Links
 - SMUN5335DW1T2G-M02 - Rochester Electronics
Newburyport, MA, United States
NPN and PNP Transistors with monolithic bias resistors

NPN and PNP Transistors with monolithic bias resistors

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number SMUN5335DW1T2G-M02
Polarity NPN; PNP
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