onsemi Bipolar Transistor Arrays, Pre-Biased SMUN5115DW1T1G

Description
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
  • Bipolar Transistor Arrays, Pre-Biased - SMUN5115DW1T1GOSTR-ND - DigiKey
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  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - 1278733-SMUN5115DW1T1G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SMUN5115DW1T1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
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Datasheet
Datasheet Summary
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The Win Source Electronics part number 1278733-SMUN5115DW1T1G is a dual PNP pre-biased transistor designed to simplify circuit design by integrating a bias resistor network into a single package. This device features a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA, making it suitable for various applications. The transistor has a DC current gain (hFE) of 160 at 5mA and 10V, with a collector-emitter saturation voltage of 250mV at 10mA. It is housed in a SOT-363 package and is compliant with RoHS standards, being both Pb-Free and Halogen Free. The device is available in tape and reel packaging, with a standard quantity of 3,000 units per reel. Its thermal characteristics indicate a maximum power dissipation of 187mW, with a junction temperature range of -55°C to +150°C. This product is suitable for applications requiring a compact design and reduced component count.

Datasheet Summary
Powered by GS/AI

The Win Source Electronics part number 1278733-SMUN5115DW1T1G is a dual PNP pre-biased transistor designed to simplify circuit design by integrating a bias resistor network into a single package. This device features a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA, making it suitable for various applications. The transistor has a DC current gain (hFE) of 160 at 5mA and 10V, with a collector-emitter saturation voltage of 250mV at 10mA. It is housed in a SOT-363 package and is compliant with RoHS standards, being both Pb-Free and Halogen Free. The device is available in tape and reel packaging, with a standard quantity of 3,000 units per reel. Its thermal characteristics indicate a maximum power dissipation of 187mW, with a junction temperature range of -55°C to +150°C. This product is suitable for applications requiring a compact design and reduced component count.

Suppliers

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Product
Description
Supplier Links
Bipolar Transistor Arrays, Pre-Biased - SMUN5115DW1T1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
SMUN5115DW1T1GOSTR-ND
Bipolar Transistor Arrays, Pre-Biased SMUN5115DW1T1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - SMUN5115DW1T1GOSCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
SMUN5115DW1T1GOSCT-ND
Bipolar Transistor Arrays, Pre-Biased SMUN5115DW1T1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

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Bipolar Transistor Arrays, Pre-Biased - SMUN5115DW1T1GOSDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
SMUN5115DW1T1GOSDKR-ND
Bipolar Transistor Arrays, Pre-Biased SMUN5115DW1T1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

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ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Dual Bipolar Transistor
293-SMUN5115DW1T1G
Dual Bipolar Transistor 293-SMUN5115DW1T1G
Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: SMUN5115DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-SMUN5115DW1T1G can be used for catalog matching and distributor lookup.

Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: SMUN5115DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-SMUN5115DW1T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - 1278733-SMUN5115DW1T1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
1278733-SMUN5115DW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased 1278733-SMUN5115DW1T1G
Win Source Part Number: 1278733-SMUN5115DW1T 1G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 187mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363 ECCN: EAR99 Fake Threat In the Open Market: 67 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 10kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: onsemi Other Names: SMUN5115DW1T1GOSDKR, SMUN5115DW1T1GOSTR,S MUN5115DW1T1GOSCT,SM UN5115DW1T1G Base Product Number: SMUN5115

Win Source Part Number: 1278733-SMUN5115DW1T1G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 187mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: onsemi
Other Names: SMUN5115DW1T1GOSDKR,SMUN5115DW1T1GOSTR,SMUN5115DW1T1GOSCT,SMUN5115DW1T1G
Base Product Number: SMUN5115

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SMUN5115DW1T1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
SMUN5115DW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) SMUN5115DW1T1G
TRANS 2PNP PREBIAS 0.187W SOT363

TRANS 2PNP PREBIAS 0.187W SOT363

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number SMUN5115DW1T1GOSTR-ND 293-SMUN5115DW1T1G 1278733-SMUN5115DW1T1G SMUN5115DW1T1G
Product Name Bipolar Transistor Arrays, Pre-Biased Dual Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP
Package Type 6-TSSOP, SC-88, SOT-363 SOT3
Transistor Grade / Operating Range Automotive
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
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