onsemi Dual Bipolar Transistor SMUN5114DW1T1G

Description
Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: SMUN5114DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-SMUN5114DW1T1G can be used for catalog matching and distributor lookup.
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - 1278732-SMUN5114DW1T1G - Win Source Electronics
    Win Source Electronics
  • SMUN5114DW1T1G - Rochester Electronics
    Rochester Electronics
  • Bipolar Transistor Arrays, Pre-Biased - SMUN5114DW1T1GOSCT-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays, Pre-Biased - SMUN5114DW1T1GOSTR-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays, Pre-Biased - SMUN5114DW1T1GOSDKR-ND - DigiKey
    DigiKey
  • Bipolar Transistor Arrays, Pre-Biased - SMUN5114DW1T1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SMUN5114DW1T1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: SMUN5114DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-SMUN5114DW1T1G can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
Dual Bipolar Transistor
293-SMUN5114DW1T1G
Dual Bipolar Transistor 293-SMUN5114DW1T1G
Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: SMUN5114DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-SMUN5114DW1T1G can be used for catalog matching and distributor lookup.

Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: SMUN5114DW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-SMUN5114DW1T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - 1278732-SMUN5114DW1T1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
1278732-SMUN5114DW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased 1278732-SMUN5114DW1T1G
Win Source Part Number: 1278732-SMUN5114DW1T 1G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 187mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363 ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: onsemi Other Names: SMUN5114DW1T1GOSDKR, SMUN5114DW1T1GOSTR,S MUN5114DW1T1GOSCT,SM UN5114DW1T1G Base Product Number: SMUN5114

Win Source Part Number: 1278732-SMUN5114DW1T1G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 187mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: onsemi
Other Names: SMUN5114DW1T1GOSDKR,SMUN5114DW1T1GOSTR,SMUN5114DW1T1GOSCT,SMUN5114DW1T1G
Base Product Number: SMUN5114

Buy Now Datasheet
- SMUN5114DW1T1G - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
SMUN5114DW1T1G
SMUN5114DW1T1G
Dual PNP Bipolar Digital Transistor (BRT)

Dual PNP Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - SMUN5114DW1T1GOSCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
SMUN5114DW1T1GOSCT-ND
Bipolar Transistor Arrays, Pre-Biased SMUN5114DW1T1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - SMUN5114DW1T1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
SMUN5114DW1T1GOSTR-ND
Bipolar Transistor Arrays, Pre-Biased SMUN5114DW1T1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - SMUN5114DW1T1GOSDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
SMUN5114DW1T1GOSDKR-ND
Bipolar Transistor Arrays, Pre-Biased SMUN5114DW1T1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
SMUN5114DW1T1G
Bipolar Transistors - Pre-Biased SMUN5114DW1T1G
Bipolar Transistors - Pre-Biased SMUN5114DW1T1G

Bipolar Transistors - Pre-Biased SMUN5114DW1T1G

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - SMUN5114DW1T1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
SMUN5114DW1T1G
Bipolar Transistor Arrays, Pre-Biased SMUN5114DW1T1G
TRANS 2PNP PREBIAS 0.187W SOT363

TRANS 2PNP PREBIAS 0.187W SOT363

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SMUN5114DW1T1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
SMUN5114DW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) SMUN5114DW1T1G
TRANS 2PNP PREBIAS 0.187W SOT363

TRANS 2PNP PREBIAS 0.187W SOT363

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Rochester Electronics DigiKey VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 293-SMUN5114DW1T1G 1278732-SMUN5114DW1T1G SMUN5114DW1T1G SMUN5114DW1T1GOSCT-ND SMUN5114DW1T1G SMUN5114DW1T1G SMUN5114DW1T1G
Product Name Dual Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased Bipolar Transistor Arrays, Pre-Biased Bipolar Transistors - Pre-Biased Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP PNP 2 PNP - Pre-Biased (Dual); PNP
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts
PD 187 milliwatts
TJ -55 C (-67 F)
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