NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL Product overview: SMMUN2216LT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-SMMUN2216LT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 896264-SMMUN2216LT1G
Features: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Package: Reel - TR
Package: TO-236-3, SC-59, SOT-23-3
Mounting: Surface Mount
Family Name: SMMUN2216
Categories: Discrete Semiconductor Products
Case / Package: SOT-23-3 (TO-236)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 94 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: SMMUN2216LT1G-ND, SMMUN2216LT1GOSDKR, SMMUN2216LT1GOSCT, SMMUN2216LT1GOSTR
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
TRANS PREBIAS NPN 50V SOT23-3
NPN Bipolar Digital Transistor (BRT) / REEL
TRANS PREBIAS NPN 50V SOT23-3
Bipolar Transistors - Pre-Biased SS BR XSTR SPCL TR
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 292-SMMUN2216LT1G | 896264-SMMUN2216LT1G | SMMUN2216LT1GOSDKR-ND | SMMUN2216LT1G | SMMUN2216LT1G | 76T7331 | SMMUN2216LT1G | SMMUN2216LT1G |
| Product Name | SOT-23 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - SMMUN2216LT1G | Single, Pre-Biased Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Npn Bipolar Digital Transistor (Brt) / Reel Onsemi | Single, Pre-Biased Bipolar Transistors | Bipolar Transistors - Pre-Biased | |
| Polarity | NPN | NPN | NPN | NPN | NPN | NPN - Pre-Biased; NPN | ||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | |||||
| VCEO | 50 volts | 50 volts | 50 volts | |||||
| PD | 246 milliwatts | |||||||
| TJ | -55 C (-67 F) |
