onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased SMMUN2116LT1G

Description
Win Source Part Number: 1094533-SMMUN2116LT1 G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 246 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Alternative Parts (Cross-Reference): MMUN2116LT1G; MMUN2115LT1G; MMUN2141LT1G; ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: onsemi Other Names: ONSONSSMMUN2116LT1G, 2156-SMMUN2116LT1G-O S Base Product Number: SMMUN2116
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Description
Win Source Part Number: 1094533-SMMUN2116LT1 G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 246 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Alternative Parts (Cross-Reference): MMUN2116LT1G; MMUN2115LT1G; MMUN2141LT1G; ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: onsemi Other Names: ONSONSSMMUN2116LT1G, 2156-SMMUN2116LT1G-O S Base Product Number: SMMUN2116
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1094533-SMMUN2116LT1G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
1094533-SMMUN2116LT1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 1094533-SMMUN2116LT1G
Win Source Part Number: 1094533-SMMUN2116LT1 G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 246 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Alternative Parts (Cross-Reference): MMUN2116LT1G; MMUN2115LT1G; MMUN2141LT1G; ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms REACH Status: REACH Unaffected HTSUS: 8541.21.0095 Mfr: onsemi Other Names: ONSONSSMMUN2116LT1G, 2156-SMMUN2116LT1G-O S Base Product Number: SMMUN2116

Win Source Part Number: 1094533-SMMUN2116LT1G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Alternative Parts (Cross-Reference): MMUN2116LT1G; MMUN2115LT1G; MMUN2141LT1G;
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 4.7 kOhms
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: onsemi
Other Names: ONSONSSMMUN2116LT1G,2156-SMMUN2116LT1G-OS
Base Product Number: SMMUN2116

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 488-SMMUN2116LT1GTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
488-SMMUN2116LT1GTR-ND
Single, Pre-Biased Bipolar Transistors 488-SMMUN2116LT1GTR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

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Single, Pre-Biased Bipolar Transistors - 488-SMMUN2116LT1GCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
488-SMMUN2116LT1GCT-ND
Single, Pre-Biased Bipolar Transistors 488-SMMUN2116LT1GCT-ND
TRANS PREBIAS PNP 50V SOT23-3

TRANS PREBIAS PNP 50V SOT23-3

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Single, Pre-Biased Bipolar Transistors - 488-SMMUN2116LT1GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
488-SMMUN2116LT1GDKR-ND
Single, Pre-Biased Bipolar Transistors 488-SMMUN2116LT1GDKR-ND
TRANS PREBIAS PNP 50V SOT23-3

TRANS PREBIAS PNP 50V SOT23-3

Buy Now Datasheet
 - SMMUN2116LT1G - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

Supplier's Site Datasheet
Pnp Bipolar Digital Transistor (Brt) / Reel Onsemi - 76T7323 - Newark, An Avnet Company
Chicago, IL, United States
Pnp Bipolar Digital Transistor (Brt) / Reel Onsemi
76T7323
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PNP Bipolar Digital Transistor (BRT) / REEL

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Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
SMMUN2116LT1G
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Bipolar Transistors - Pre-Biased SS BR XSTR SPCL TR

Bipolar Transistors - Pre-Biased SS BR XSTR SPCL TR

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SMMUN2116LT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
SMMUN2116LT1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) SMMUN2116LT1G
TRANS PREBIAS PNP 50V SOT23-3

TRANS PREBIAS PNP 50V SOT23-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1094533-SMMUN2116LT1G 488-SMMUN2116LT1GTR-ND SMMUN2116LT1G 76T7323 SMMUN2116LT1G SMMUN2116LT1G
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Single, Pre-Biased Bipolar Transistors Pnp Bipolar Digital Transistor (Brt) / Reel Onsemi Bipolar Transistors - Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP PNP
Package Type SOT3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; SOT-23-CPR TO-3 SOT23; TO-236-3, SC-59, SOT-23-3
IC(max) 100 milliamps 100 milliamps
Power Gain 160 dB
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