onsemi Transistor Polarity Onsemi SMMBT4403LT1G.

Description
Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:200MHz; DC Current Gain hFE Min:20hFERoHS Compliant: Yes
Description
Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:200MHz; DC Current Gain hFE Min:20hFERoHS Compliant: Yes
Datasheet
Datasheet Summary
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The SMMBT4403LT1G is a PNP silicon switching transistor in an SOT-23 package, designed for surface mount applications. It has a collector-emitter voltage rating of -40 V, a continuous collector current of -600 mA, and a peak collector current of -900 mA. Power dissipation is 225 mW on FR-5 board at 25°C, derating at 1.8 mW/°C above 25°C. The device offers a DC current gain (hFE) ranging from 20 to 300 depending on operating conditions, with a current-gain-bandwidth product of 200 MHz. Junction and storage temperature range is -55°C to +150°C. The part is Pb-free, halogen-free/BFR-free, RoHS 3 compliant, and AEC-Q101 qualified.

Datasheet Summary
Powered by GS/AI

The SMMBT4403LT1G is a PNP silicon switching transistor in an SOT-23 package, designed for surface mount applications. It has a collector-emitter voltage rating of -40 V, a continuous collector current of -600 mA, and a peak collector current of -900 mA. Power dissipation is 225 mW on FR-5 board at 25°C, derating at 1.8 mW/°C above 25°C. The device offers a DC current gain (hFE) ranging from 20 to 300 depending on operating conditions, with a current-gain-bandwidth product of 200 MHz. Junction and storage temperature range is -55°C to +150°C. The part is Pb-free, halogen-free/BFR-free, RoHS 3 compliant, and AEC-Q101 qualified.

Suppliers

Company
Product
Description
Supplier Links
Transistor Polarity Onsemi - 61AC2014 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Polarity Onsemi
61AC2014
Transistor Polarity Onsemi 61AC2014
Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:200MHz; DC Current Gain hFE Min:20hFERoHS Compliant: Yes

Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:200MHz; DC Current Gain hFE Min:20hFERoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 61AC2014
Product Name Transistor Polarity Onsemi
Transistor Type Transistor Polarity Onsemi
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