MOSFET 2N-CH 50V 3A 8-SOIC Product overview: SI9955DY from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 3A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI9955DY can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 50V 3A 900mW Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 135867-SI9955DY
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 345pF @ 15V
Maximum Rds On at Id,Vgs: 130 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
MOSFET 2N-CH 50V 3A 8SOIC
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-SI9955DY | SI9955DYTR-ND | 135867-SI9955DY | SI9955DY |
| Product Name | 50V 3A SOIC MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI9955DY | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||
| PD | 900 milliwatts | 900 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |