onsemi FETs - Single - Si9435DY Si9435DY

Description
Manufacturer: ON Semiconductor Win Source Part Number: 804641-Si9435DY Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30V Part Status: Obsolete (End Of Life) Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.5W Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 50mOhm at 5.3A, 10V Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 15V Current - Continuous Drain (Id) at 25°C: 5.3A Vgs(th) (Maximum) at Id: 3V at 250μA Maximum Vgs: ±20V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 804641-Si9435DY Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30V Part Status: Obsolete (End Of Life) Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.5W Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 50mOhm at 5.3A, 10V Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 15V Current - Continuous Drain (Id) at 25°C: 5.3A Vgs(th) (Maximum) at Id: 3V at 250μA Maximum Vgs: ±20V
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Suppliers

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FETs - Single - Si9435DY - 804641-Si9435DY - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - Si9435DY
804641-Si9435DY
FETs - Single - Si9435DY 804641-Si9435DY
Manufacturer: ON Semiconductor Win Source Part Number: 804641-Si9435DY Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30V Part Status: Obsolete (End Of Life) Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.5W Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 50mOhm at 5.3A, 10V Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 15V Current - Continuous Drain (Id) at 25°C: 5.3A Vgs(th) (Maximum) at Id: 3V at 250μA Maximum Vgs: ±20V

Manufacturer: ON Semiconductor
Win Source Part Number: 804641-Si9435DY
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30V
Part Status: Obsolete (End Of Life)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.5W
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 50mOhm at 5.3A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 15V
Current - Continuous Drain (Id) at 25°C: 5.3A
Vgs(th) (Maximum) at Id: 3V at 250μA
Maximum Vgs: ±20V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 804641-Si9435DY
Product Name FETs - Single - Si9435DY
Polarity P-Channel
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