onsemi MOSFETs SI4532DY

MOSFET Dual N/P-Ch 30V 3.9A/3.5A SOIC8

MOSFET Dual N/P-Ch 30V 3.9A/3.5A SOIC8

MOSFET Dual N/P-Ch 30V 3.9A/3.5A SOIC8

POWER FIELD-EFFECT TRANSISTOR, 3

MOSFET N/P-CH 30V 3.9/3.5A 8SOIC

MOSFETs 30V Dual N/P FET Enhancement Mode Product overview: SI4532DY from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4532DY can be used for catalog matching and distributor lookup.

Mosfet Array N and P-Channel 30V 3.9A, 3.5A 900mW Surface Mount 8-SOIC

Mosfet Array N and P-Channel 30V 3.9A, 3.5A 900mW Surface Mount 8-SOIC

Mosfet Array N and P-Channel 30V 3.9A, 3.5A 900mW Surface Mount 8-SOIC

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 028510-SI4532DY
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.9A, 3.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 235pF @ 10V
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Computers & Computer Peripherals
Quantity per package: 2,500