P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 028489-SI4435DY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: Si4435DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24nC @ 5V
Max Input Capacitance: 1604pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 8.8A, 10V
Alternative Parts (Cross-Reference): UPA2713GR-E2-AT; UPA2713GR; Si4441EDY-T1-E3 ; TSM180P03CS RLG;
Introduction Date: June 15, 1999
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
MOSFET P-CH 30V 8.8A 8SOIC
MOSFET P-Ch 30V 8.8A PowerTrench SOIC8
MOSFET P-Ch 30V 8.8A PowerTrench SOIC8
MOSFET P-Ch 30V 8.8A PowerTrench SOIC8
TRANSISTOR, MOSFET, P-CHANNEL, 1 CHANNEL, 30V, 8.8A, 2.5W, 42NS TURN-OFF, 13NS TURN-ON, 8-SOIC. FREE 2 YEAR RADWELL WARRANTY
MOSFET P-CH 30V 8.8A 8SOIC
TRANSISTOR, MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.7V; Power Dissipation RoHS Compliant: Yes
MOSFET, P CHANNEL, -30V, -8.8A, SOIC-8; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 8.8A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4435DYFSTR-ND | 028489-SI4435DY | SI4435DY | 9034412P | 9034412 | 16137232 | SI4435DY | 27W2091 | 29X6856 | SI4435DY |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4435DY | Single FETs, MOSFETs | MOSFETs | MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor, Mosfet; Transistor Polarity Onsemi | Mosfet, P Channel, -30V, -8.8A, Soic-8; Channel Type Onsemi | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | SOIC | Soic | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 | ||
| V(BR)DSS | 30 volts | 30 volts | ||||||||
| PD | 2500 milliwatts | 2500 milliwatts | ||||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
