onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - SFT1431-TL-E SFT1431-TL-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 042572-SFT1431-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta), 15W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TP-FA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 35V Continuous Drain Current at 25°C: 11A (Ta) Max Gate Charge: 17.3nC @ 10V Max Input Capacitance: 960pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 042572-SFT1431-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta), 15W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TP-FA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 35V Continuous Drain Current at 25°C: 11A (Ta) Max Gate Charge: 17.3nC @ 10V Max Input Capacitance: 960pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SFT1431-TL-E - 042572-SFT1431-TL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SFT1431-TL-E
042572-SFT1431-TL-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SFT1431-TL-E 042572-SFT1431-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 042572-SFT1431-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta), 15W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TP-FA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 35V Continuous Drain Current at 25°C: 11A (Ta) Max Gate Charge: 17.3nC @ 10V Max Input Capacitance: 960pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 042572-SFT1431-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TP-FA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 35V
Continuous Drain Current at 25°C: 11A (Ta)
Max Gate Charge: 17.3nC @ 10V
Max Input Capacitance: 960pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 042572-SFT1431-TL-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SFT1431-TL-E
Polarity N-Channel; N-Channel
V(BR)DSS 35 volts
PD 1000 to 15000 milliwatts
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