NPN Bipolar Transistor hFE 40 to 250, SOT-223 (TO-261) 4 LEAD, 1000-REEL Product overview: SBCP56T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-SBCP56T1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1094531-SBCP56T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: SOT-223-3
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 40 @ 150mA, 2V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Communications & Networking, Power Management
Bipolar (BJT) Transistor NPN 80V 1A 130MHz 1.5W Surface Mount SOT-223 (TO-261)
Bipolar (BJT) Transistor NPN 80V 1A 130MHz 1.5W Surface Mount SOT-223 (TO-261)
Bipolar (BJT) Transistor NPN 80V 1A 130MHz 1.5W Surface Mount SOT-223 (TO-261)
TRANSISTOR, AEC-Q101, NPN, 80V, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:130MHz; Power Dissipation Pd:1.5W; DC Collector Current:1A; DC Current Gain hFE:25hFE; Transistor Case RoHS Compliant: Yes
TRANSISTOR, AEC-Q101, NPN, 80V, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:130MHz; Power Dissipation Pd:1.5W; DC Collector Current:1A; DC Current Gain hFE:25hFE; Transistor Case RoHS Compliant: Yes
Bipolar Transistors - BJT SS GP XSTR NPN 80V
NPN BIPOLAR TRANSISTOR HFE 40 TO
TRANS NPN 80V 1A SOT223
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 276-SBCP56T1G | 1094531-SBCP56T1G | SBCP56T1GOSCT-ND | 50AC7285 | SBCP56T1G | SBCP56T1G | SBCP56T1G |
| Product Name | Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - SBCP56T1G | Single Bipolar Transistors | Transistor, Aec-Q101, Npn, 80V, Sot-223; Transistor Polarity Onsemi | Bipolar Transistors - BJT | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN | NPN | NPN | NPN; NPN | ||
| IC(max) | 1000 milliamps | 1000 milliamps | 1000 milliamps | ||||
| VCEO | 80 volts | 80 volts | 80 volts | ||||
| VCBO | 100 volts | ||||||
| fT | 130 MHz |
