onsemi TRANSISTORS - Transistors (BJT) - Arrays - SBC847BPDW1T1G SBC847BPDW1T1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1246542-SBC847BPDW1T 1G Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 6-TSSOP, SC-88, SOT-363 Mounting: SMD Power - Max: 380mW Transistor Type: NPN, PNP Frequency - Transition: 100MHz Family Name: BC847BPDW1 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: SC-88/SC70-6/SOT-363 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 45V Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Maximum): 15nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 2mA, 5V Alternative Parts (Cross-Reference): LBC847BPDW1T3G; BC847BPNT; BC847BPN/DG; Introduction Date: February 28, 2000 ECCN: EAR99 Country of Origin: Morocco Estimated EOL Date: 2023 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1246542-SBC847BPDW1T 1G Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 6-TSSOP, SC-88, SOT-363 Mounting: SMD Power - Max: 380mW Transistor Type: NPN, PNP Frequency - Transition: 100MHz Family Name: BC847BPDW1 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: SC-88/SC70-6/SOT-363 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 45V Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Maximum): 15nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 2mA, 5V Alternative Parts (Cross-Reference): LBC847BPDW1T3G; BC847BPNT; BC847BPN/DG; Introduction Date: February 28, 2000 ECCN: EAR99 Country of Origin: Morocco Estimated EOL Date: 2023 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - SBC847BPDW1T1G - 1246542-SBC847BPDW1T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - SBC847BPDW1T1G
1246542-SBC847BPDW1T1G
TRANSISTORS - Transistors (BJT) - Arrays - SBC847BPDW1T1G 1246542-SBC847BPDW1T1G
Manufacturer: ON Semiconductor Win Source Part Number: 1246542-SBC847BPDW1T 1G Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 6-TSSOP, SC-88, SOT-363 Mounting: SMD Power - Max: 380mW Transistor Type: NPN, PNP Frequency - Transition: 100MHz Family Name: BC847BPDW1 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: SC-88/SC70-6/SOT-363 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 45V Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Maximum): 15nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 2mA, 5V Alternative Parts (Cross-Reference): LBC847BPDW1T3G; BC847BPNT; BC847BPN/DG; Introduction Date: February 28, 2000 ECCN: EAR99 Country of Origin: Morocco Estimated EOL Date: 2023 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1246542-SBC847BPDW1T1G
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 6-TSSOP, SC-88, SOT-363
Mounting: SMD
Power - Max: 380mW
Transistor Type: NPN, PNP
Frequency - Transition: 100MHz
Family Name: BC847BPDW1
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: SC-88/SC70-6/SOT-363
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 45V
Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Maximum): 15nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 2mA, 5V
Alternative Parts (Cross-Reference): LBC847BPDW1T3G; BC847BPNT; BC847BPN/DG;
Introduction Date: February 28, 2000
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays - SBC847BPDW1T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
SBC847BPDW1T1GOSTR-ND
Bipolar Transistor Arrays SBC847BPDW1T1GOSTR-ND
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays - SBC847BPDW1T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
SBC847BPDW1T1GOSCT-ND
Bipolar Transistor Arrays SBC847BPDW1T1GOSCT-ND
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Buy Now Datasheet
Bipolar Transistor Arrays - SBC847BPDW1T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
SBC847BPDW1T1GOSDKR-ND
Bipolar Transistor Arrays SBC847BPDW1T1GOSDKR-ND
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

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Bipolar Transistor Arrays - SBC847BPDW1T1G - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
SBC847BPDW1T1G
Bipolar Transistor Arrays SBC847BPDW1T1G
TRANS NPN/PNP 45V 0.1A SOT-363

TRANS NPN/PNP 45V 0.1A SOT-363

Supplier's Site Datasheet
Singapore
100 mA 45 V Bipolar Transistor
277-SBC847BPDW1T1G
100 mA 45 V Bipolar Transistor 277-SBC847BPDW1T1G
100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: SBC847BPDW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100 mA, 45 V. Search-friendly keywords include transistor, BJT, switching, amplification, 100 mA, 45 V, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-SBC847BPDW1T1G can be used for catalog matching and distributor lookup.

100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: SBC847BPDW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100 mA, 45 V. Search-friendly keywords include transistor, BJT, switching, amplification, 100 mA, 45 V, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-SBC847BPDW1T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
SBC847BPDW1T1G
Bipolar Transistors - BJT SBC847BPDW1T1G
Bipolar Transistors - BJT SS GP XSTR DUAL 45V

Bipolar Transistors - BJT SS GP XSTR DUAL 45V

Buy Now Datasheet
Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi - 13AC6241 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi
13AC6241
Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi 13AC6241
TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 45V; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:200hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 45V; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:200hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi - 13AC3967 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi
13AC3967
Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi 13AC3967
TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 45V; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. ofRoHS Compliant: Yes

TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 45V; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. ofRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SBC847BPDW1T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
SBC847BPDW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) SBC847BPDW1T1G
TRANS NPN/PNP 45V 0.1A SOT-363

TRANS NPN/PNP 45V 0.1A SOT-363

Supplier's Site
Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R - 598-SBC847BPDW1T1G - Utmel Electronic Limited
Hong Kong, China
Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R
598-SBC847BPDW1T1G
Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R 598-SBC847BPDW1T1G
Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R

Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1246542-SBC847BPDW1T1G SBC847BPDW1T1GOSTR-ND SBC847BPDW1T1G 277-SBC847BPDW1T1G SBC847BPDW1T1G 13AC6241 13AC3967 SBC847BPDW1T1G 598-SBC847BPDW1T1G
Product Name TRANSISTORS - Transistors (BJT) - Arrays - SBC847BPDW1T1G Bipolar Transistor Arrays Bipolar Transistor Arrays 100 mA 45 V Bipolar Transistor Bipolar Transistors - BJT Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R
Polarity NPN; PNP NPN; PNP NPN, PNP; NPN; PNP NPN; PNP NPN; PNP NPN; PNP NPN, PNP; NPN; PNP
Package Type SOT3 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 TO-3 TO-3; SOT3 AEC-Q101
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR Tape Reel; Tape & Reel (TR)
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Power Gain 200 dB
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