onsemi Bipolar Transistor Arrays SBC847BPDW1T1G

Description
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
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Description
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Request a Quote Datasheet

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Product
Description
Supplier Links
Bipolar Transistor Arrays - SBC847BPDW1T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
SBC847BPDW1T1GOSTR-ND
Bipolar Transistor Arrays SBC847BPDW1T1GOSTR-ND
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

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Bipolar Transistor Arrays - SBC847BPDW1T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
SBC847BPDW1T1GOSCT-ND
Bipolar Transistor Arrays SBC847BPDW1T1GOSCT-ND
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

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Bipolar Transistor Arrays - SBC847BPDW1T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
SBC847BPDW1T1GOSDKR-ND
Bipolar Transistor Arrays SBC847BPDW1T1GOSDKR-ND
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

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TRANSISTORS - Transistors (BJT) - Arrays - SBC847BPDW1T1G - 1246542-SBC847BPDW1T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - SBC847BPDW1T1G
1246542-SBC847BPDW1T1G
TRANSISTORS - Transistors (BJT) - Arrays - SBC847BPDW1T1G 1246542-SBC847BPDW1T1G
Manufacturer: ON Semiconductor Win Source Part Number: 1246542-SBC847BPDW1T 1G Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 6-TSSOP, SC-88, SOT-363 Mounting: SMD Power - Max: 380mW Transistor Type: NPN, PNP Frequency - Transition: 100MHz Family Name: BC847BPDW1 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com Manufacturer Package: SC-88/SC70-6/SOT-363 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 45V Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Maximum): 15nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 2mA, 5V Alternative Parts (Cross-Reference): LBC847BPDW1T3G; BC847BPNT; BC847BPN/DG; Introduction Date: February 28, 2000 ECCN: EAR99 Country of Origin: Morocco Estimated EOL Date: 2023 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1246542-SBC847BPDW1T1G
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 6-TSSOP, SC-88, SOT-363
Mounting: SMD
Power - Max: 380mW
Transistor Type: NPN, PNP
Frequency - Transition: 100MHz
Family Name: BC847BPDW1
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: SC-88/SC70-6/SOT-363
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 45V
Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Maximum): 15nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 2mA, 5V
Alternative Parts (Cross-Reference): LBC847BPDW1T3G; BC847BPNT; BC847BPN/DG;
Introduction Date: February 28, 2000
ECCN: EAR99
Country of Origin: Morocco
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

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Bipolar Transistor Arrays - SBC847BPDW1T1G - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
SBC847BPDW1T1G
Bipolar Transistor Arrays SBC847BPDW1T1G
TRANS NPN/PNP 45V 0.1A SOT-363

TRANS NPN/PNP 45V 0.1A SOT-363

Supplier's Site Datasheet
Singapore
100 mA 45 V Bipolar Transistor
277-SBC847BPDW1T1G
100 mA 45 V Bipolar Transistor 277-SBC847BPDW1T1G
100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: SBC847BPDW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100 mA, 45 V. Search-friendly keywords include transistor, BJT, switching, amplification, 100 mA, 45 V, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-SBC847BPDW1T1G can be used for catalog matching and distributor lookup.

100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: SBC847BPDW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100 mA, 45 V. Search-friendly keywords include transistor, BJT, switching, amplification, 100 mA, 45 V, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-SBC847BPDW1T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R - 598-SBC847BPDW1T1G - Utmel Electronic Limited
Hong Kong, China
Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R
598-SBC847BPDW1T1G
Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R 598-SBC847BPDW1T1G
Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R

Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
SBC847BPDW1T1G
Bipolar Transistors - BJT SBC847BPDW1T1G
Bipolar Transistors - BJT SS GP XSTR DUAL 45V

Bipolar Transistors - BJT SS GP XSTR DUAL 45V

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - SBC847BPDW1T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
SBC847BPDW1T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) SBC847BPDW1T1G
TRANS NPN/PNP 45V 0.1A SOT-363

TRANS NPN/PNP 45V 0.1A SOT-363

Supplier's Site
Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi - 13AC6241 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi
13AC6241
Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi 13AC6241
TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 45V; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:200hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 45V; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:200hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi - 13AC3967 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi
13AC3967
Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi 13AC3967
TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 45V; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. ofRoHS Compliant: Yes

TRANSISTOR ARRAY, AEC-Q101, NPN/PNP, 45V; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. ofRoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors
Product Number SBC847BPDW1T1GOSTR-ND 1246542-SBC847BPDW1T1G SBC847BPDW1T1G 277-SBC847BPDW1T1G 598-SBC847BPDW1T1G SBC847BPDW1T1G SBC847BPDW1T1G 13AC6241 13AC3967
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - SBC847BPDW1T1G Bipolar Transistor Arrays 100 mA 45 V Bipolar Transistor Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi Transistor Array, Aec-Q101, Npn/pnp, 45V; Transistor Polarity Onsemi
Polarity NPN; PNP NPN; PNP NPN, PNP; NPN; PNP NPN; PNP NPN, PNP; NPN; PNP NPN; PNP NPN; PNP
Package Type 6-TSSOP, SC-88, SOT-363 SOT3 6-TSSOP, SC-88, SOT-363 AEC-Q101 TO-3 TO-3; SOT3
Transistor Grade / Operating Range Automotive
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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