onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - S4P01 S4P01

Manufacturer: ON Semiconductor
Win Source Part Number: 211228-S4P01
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 790mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.4A (Ta)
Gate-Source Threshold Voltage: 1.15V @ 250μA
Max Gate Charge: 35nC @ 4.5V
Max Input Capacitance: 1850pF @ 9.6V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 45 mOhm @ 4.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

MOSFET P-CH 12V 3.4A 8-SOIC Product overview: S4P01 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 3.4A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 3.4A, SOIC, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-S4P01 can be used for catalog matching and distributor lookup.