onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFP50N05 RFP50N05

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 294099-RFP50N05 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 140nC @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 22 mOhm @ 50A, 5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 294099-RFP50N05 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 140nC @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 22 mOhm @ 50A, 5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFP50N05 - 294099-RFP50N05 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFP50N05
294099-RFP50N05
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFP50N05 294099-RFP50N05
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 294099-RFP50N05 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 140nC @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 22 mOhm @ 50A, 5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 294099-RFP50N05
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 140nC @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 22 mOhm @ 50A, 5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 294099-RFP50N05
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFP50N05
Polarity N-Channel; N-Channel
V(BR)DSS 50 volts
PD 110000 milliwatts
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