onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFP30N06LE RFP30N06LE

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 062511-RFP30N06LE
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 96W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 30A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 1350pF @ 25V
Maximum Gate-Source Voltage: +10V, -8V
Maximum Rds On at Id,Vgs: 47 mOhm @ 30A, 5V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

60V 30A N-CH MOSFET TO-220AB Product overview: RFP30N06LE from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RFP30N06LE can be used for catalog matching and distributor lookup.

N-Channel 60V 30A (Ta) 96W (Tc) Through Hole TO-220-3