onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFP3055LE RFP3055LE

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 027406-RFP3055LE
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11.3nC @ 10V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 107 mOhm @ 8A, 5V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 400

Trans MOSFET N-CH 60V 11A 3-Pin (3+Tab) TO-220AB Rail Product overview: RFP3055LE from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RFP3055LE can be used for catalog matching and distributor lookup.

N-Channel 60V 11A (Tc) 38W (Tc) Through Hole TO-220-3