onsemi Single FETs, MOSFETs RFG60P05E

Description
P-Channel 50V 60A (Tc) 215W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
P-Channel 50V 60A (Tc) 215W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - RFG60P05E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RFG60P05E-ND
Single FETs, MOSFETs RFG60P05E-ND
P-Channel 50V 60A (Tc) 215W (Tc) Through Hole TO-247-3

P-Channel 50V 60A (Tc) 215W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFG60P05E - 1092142-RFG60P05E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFG60P05E
1092142-RFG60P05E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFG60P05E 1092142-RFG60P05E
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1092142-RFG60P05E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 215W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 450nC @ 20V Max Input Capacitance: 7200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 mOhm @ 60A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1092142-RFG60P05E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 215W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 450nC @ 20V
Max Input Capacitance: 7200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 30 mOhm @ 60A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RFG60P05E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RFG60P05E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RFG60P05E
MOSFET P-CH 50V 60A TO247-3

MOSFET P-CH 50V 60A TO247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number RFG60P05E-ND 1092142-RFG60P05E RFG60P05E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFG60P05E Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247 TO-247; TO-247-3
V(BR)DSS 50 volts
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