N-Channel 60V 11A (Tc) 38W (Tc) Surface Mount TO-252AA
N-Channel 60V 11A (Tc) 38W (Tc) Surface Mount TO-252AA
N-Channel 60V 11A (Tc) 38W (Tc) Surface Mount TO-252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015910-RFD3055LESM9A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Family Name: RFD3055LESM
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11.3nC @ 10V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 107 mOhm @ 8A, 5V
Alternative Parts (Cross-Reference): IRFR024TRL; IRFR024; IRLR024TR;
Introduction Date: January 01, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Motor Drive & Control, Industrial
Quantity per package: 2,500
MOSFET N-CH 60V 11A TO252AA
N CHANNEL MOSFET, 60V, 12A TO-252AA, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 11 A, 60 V, 0.107 ohm, 5 V, 3 V RoHS Compliant: Yes
MOSFET N-CH 60V 11A TO252AA
MOSFET N-CH 60V 11A TO-252AA
60V 11A 107mΩ@8A,5V 38W 3V@250uA null DPAK-3 MOSFETs ROHS
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RFD3055LESM9ADKR-ND | 015910-RFD3055LESM9A | RFD3055LESM9A | 8022159 | 8022159P | 05B7479 | 31Y4007 | RFD3055LESM9A | RFD3055LESM9A | 598-RFD3055LESM9A | RFD3055LESM9A |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFD3055LESM9A | Single FETs, MOSFETs | MOSFETs | MOSFETs | N Channel Mosfet, 60V, 12A To-252Aa, Full Reel; Channel Type Onsemi | Mosfet Transistor, N Channel, 11 A, 60 V, 0.107 Ohm, 5 V, 3 V Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-CH 60V 11A TO-252AA | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); TO-252AA | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | TO-3 | TO-3 | Surface Mount | |||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | |||||||
| PD | 38000 milliwatts | 38000 milliwatts | 38000 milliwatts | 38000 milliwatts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
