MOSFET N-CH 60V 11A TO252AA
MOSFETs Power MOSFET Product overview: RFD3055LESM9A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-RFD3055LESM9A can be used for catalog matching and distributor lookup.
N-Channel 60V 11A (Tc) 38W (Tc) Surface Mount TO-252AA
N-Channel 60V 11A (Tc) 38W (Tc) Surface Mount TO-252AA
N-Channel 60V 11A (Tc) 38W (Tc) Surface Mount TO-252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015910-RFD3055LESM9A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Family Name: RFD3055LESM
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11.3nC @ 10V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 107 mOhm @ 8A, 5V
Alternative Parts (Cross-Reference): IRFR024TRL; IRFR024; IRLR024TR;
Introduction Date: January 01, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Motor Drive & Control, Industrial
Quantity per package: 2,500
MOSFET N-CH 60V 11A TO-252AA
N CHANNEL MOSFET, 60V, 12A TO-252AA, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 11 A, 60 V, 0.107 ohm, 5 V, 3 V RoHS Compliant: Yes
MOSFET N-CH 60V 11A TO252AA
60V 11A 107mΩ@8A,5V 38W 3V@250uA null DPAK-3 MOSFETs ROHS
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RFD3055LESM9A | 2088-RFD3055LESM9A | 8022159 | 8022159P | RFD3055LESM9ADKR-ND | 015910-RFD3055LESM9A | 598-RFD3055LESM9A | 05B7479 | 31Y4007 | RFD3055LESM9A | RFD3055LESM9A | RFD3055LESM9A |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFD3055LESM9A | MOSFET N-CH 60V 11A TO-252AA | N Channel Mosfet, 60V, 12A To-252Aa, Full Reel; Channel Type Onsemi | Mosfet Transistor, N Channel, 11 A, 60 V, 0.107 Ohm, 5 V, 3 V Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | ||||||||
| IDSS | 11000 milliamps | 11000 milliamps | ||||||||||
| PD | 38000 milliwatts | 38 milliwatts | 38000 milliwatts | 38000 milliwatts | 38000 milliwatts |
