N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ, 1800-TUBE Product overview: RFD3055LE from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RFD3055LE can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 182853-RFD3055LE
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11.3nC @ 10V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 107 mOhm @ 8A, 5V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Motor Drive & Control, Industrial
Quantity per package: 1,800
N-Channel 60V 11A (Tc) 38W (Tc) Through Hole I-PAK
MOSFET N-CH 60V 11A IPAK
N CHANNEL MOSFET, 60V, 11A TO-251AA; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:11A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.107OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:3V; PRODUCT RANGE:-ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET Transistor, N Channel, 11 A, 60 V, 107 mohm, 5 V, 3 V RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 11A TO-251AA; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 60V 11A IPAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-RFD3055LE | 182853-RFD3055LE | RFD3055LE-ND | RFD3055LE | RFD3055LE | 16121354 | 31Y4006 | 58K2124 | RFD3055LE |
| Product Name | N-Channel 60V 11A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RFD3055LE | Single FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Transistor | Mosfet Transistor, N Channel, 11 A, 60 V, 107 Mohm, 5 V, 3 V Rohs Compliant Onsemi | N Channel Mosfet, 60V, 11A To-251Aa; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 60 volts | 60 volts | |||||||
| PD | 38000 milliwatts | 38000 milliwatts | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
