The QSE213 is a silicon NPN infrared phototransistor in a side-looking plastic package with a 50° reception angle and a daylight filter. It has a peak sensitivity at 880 nm, a collector-emitter voltage rating of 30 V, and a power dissipation of 100 mW. Operating and storage temperatures range from -40°C to +100°C. The on-state collector current under 0.5 mW/cm² illumination at 5 V is between 0.2 mA and 1.50 mA. The device meets no specified industry standards. The package dimensions are 5.71 mm x 4.51 mm x 1.50 mm. Its matching emitter is the QEE213.
Photo Transistor
| Rochester Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | QSE213 |
