The QSE113 is a silicon NPN infrared phototransistor in a sidelooker package with black epoxy housing, measuring 12.70 mm in length and 5.08 mm in width. It features a 50° reception angle, a peak sensitivity wavelength of 880 nm, and a daylight filter. The device has a collector-emitter voltage rating of 30 V, an emitter-collector breakdown voltage of 5 V, and a maximum power dissipation of 100 mW. It operates over a temperature range of -40°C to +100°C and meets IEC 60286-3 soldering requirements with a peak temperature of 260°C for 10 seconds. A blue dot marks the top side for polarity identification.
Photo Transistor, 880nm
| Rochester Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | QSE113 |
| Package Type | O-IRSL |
