onsemi Single Bipolar Transistors PZTA96ST1

The PZTA96ST1G is a PNP silicon transistor in an SOT-223 package, rated for a collector-emitter voltage of -450 V and a continuous collector current of -500 mA. It has a total power dissipation of 1.5 W at 25°C and a junction temperature rating of 150°C. The device exhibits a DC current gain (hFE) between 50 and 150 at -10 mA collector current and -10 V collector-emitter voltage, with a collector-emitter saturation voltage of no more than -0.6 V at -20 mA collector and -2 mA base current. Thermal resistance from junction to ambient is 83.3°C/W. The part is RoHS compliant, Pb-free, and halogen-free. It is designed for high-voltage switching applications.