onsemi Bipolar Transistor PZT3906T1G

Description
General PurposeTransistor PNP SOT223, SOT-223 (TO-261) 4 LEAD, 1000-REEL Product overview: PZT3906T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PZT3906T1G can be used for catalog matching and distributor lookup.
  • Single Bipolar Transistors - PZT3906T1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single Bipolar Transistors - 488-PZT3906T1GTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - PZT3906T1G - 1090866-PZT3906T1G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PZT3906T1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
General PurposeTransistor PNP SOT223, SOT-223 (TO-261) 4 LEAD, 1000-REEL Product overview: PZT3906T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PZT3906T1G can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
Bipolar Transistor
276-PZT3906T1G
Bipolar Transistor 276-PZT3906T1G
General PurposeTransistor PNP SOT223, SOT-223 (TO-261) 4 LEAD, 1000-REEL Product overview: PZT3906T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PZT3906T1G can be used for catalog matching and distributor lookup.

General PurposeTransistor PNP SOT223, SOT-223 (TO-261) 4 LEAD, 1000-REEL Product overview: PZT3906T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-PZT3906T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - PZT3906T1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
PZT3906T1G
Single Bipolar Transistors PZT3906T1G
TRANS PNP 40V 0.2A SOT223

TRANS PNP 40V 0.2A SOT223

Supplier's Site Datasheet
Single Bipolar Transistors - 488-PZT3906T1GTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
488-PZT3906T1GTR-ND
Single Bipolar Transistors 488-PZT3906T1GTR-ND
Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 1.5W Surface Mount SOT-223 (TO-261)

Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 1.5W Surface Mount SOT-223 (TO-261)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - PZT3906T1G - 1090866-PZT3906T1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PZT3906T1G
1090866-PZT3906T1G
TRANSISTORS - Transistors (BJT) - Single - PZT3906T1G 1090866-PZT3906T1G
Manufacturer: ON Semiconductor Win Source Part Number: 1090866-PZT3906T1G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 400mV @ 5mA, 50mA Typical Gain (hFE) (Min): 100 @ 10mA, 1V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1090866-PZT3906T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min): 100 @ 10mA, 1V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PZT3906T1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PZT3906T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PZT3906T1G
TRANS PNP 40V 0.2A SOT223

TRANS PNP 40V 0.2A SOT223

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number 276-PZT3906T1G PZT3906T1G 488-PZT3906T1GTR-ND 1090866-PZT3906T1G PZT3906T1G
Product Name Bipolar Transistor Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - PZT3906T1G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP PNP PNP; PNP
IC(max) 200 milliamps 200 milliamps 200 milliamps
VCEO 40 volts 40 volts 40 volts
VCBO -40 volts
fT 250 MHz
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