onsemi TRANSISTORS - Transistors (BJT) - Single - P2N2907AZL1 P2N2907AZL1

Manufacturer: ON Semiconductor
Win Source Part Number: 1085447-P2N2907AZL1
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 200MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 1.6V @ 50mA, 500mA
Collector Cut-off Current(Max): 10nA
Typical Gain (hFE) (Min): 100 @ 150mA, 10V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

GP EPITAXIAL PLANAR SILICON TRANSISTOR Product overview: P2N2907AZL1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-P2N2907AZL1 can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 625mW Through Hole TO-92 (TO-226)