onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors P2N2222AG

Description
Win Source Part Number: 1379408-P2N2222AG Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 42 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Package: Bulk Product Status: Obsolete Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92 (TO-226) Base Product Number: P2N222 Mounting Type: Through Hole HTSUS: 8541.21.0075 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA Frequency - Transition: 300MHz Power - Max: 625 mW
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1379408-P2N2222AG - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - P2N2222AGOS-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - P2N2222AG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1379408-P2N2222AG Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 42 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Package: Bulk Product Status: Obsolete Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92 (TO-226) Base Product Number: P2N222 Mounting Type: Through Hole HTSUS: 8541.21.0075 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA Frequency - Transition: 300MHz Power - Max: 625 mW
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1379408-P2N2222AG - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1379408-P2N2222AG
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1379408-P2N2222AG
Win Source Part Number: 1379408-P2N2222AG Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 42 pct. MSL Level: 1 (Unlimited) Mfr: onsemi Package: Bulk Product Status: Obsolete Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92 (TO-226) Base Product Number: P2N222 Mounting Type: Through Hole HTSUS: 8541.21.0075 REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: NPN Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA Frequency - Transition: 300MHz Power - Max: 625 mW

Win Source Part Number: 1379408-P2N2222AG
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 42 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Package: Bulk
Product Status: Obsolete
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92 (TO-226)
Base Product Number: P2N222
Mounting Type: Through Hole
HTSUS: 8541.21.0075
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: NPN
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
Frequency - Transition: 300MHz
Power - Max: 625 mW

Buy Now Datasheet
Single Bipolar Transistors - P2N2222AGOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
P2N2222AGOS-ND
Single Bipolar Transistors P2N2222AGOS-ND
Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - P2N2222AG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
P2N2222AG
Discrete Semiconductor Products - Transistors - Bipolar (BJT) P2N2222AG
TRANS NPN 40V 0.6A TO92

TRANS NPN 40V 0.6A TO92

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 1379408-P2N2222AG P2N2222AGOS-ND P2N2222AG
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Unlock Full Specs
to access all available technical data