The NXV65HR82DS1 is a 16-lead SIP H-bridge power module designed for on-board chargers in electric and plug-in hybrid vehicles. It features a 5 kV/1 s electrically isolated substrate, creepage and clearance compliant with IEC60664-1 and IEC60950-1, and integrates a 150 nF ±10% snubber capacitor. The module is housed in an APM16-CAA package with Y-shape lead forming, operates from -40°C to 125°C, and is RoHS compliant with UL 94 V-0 flammability rating. It is automotive qualified per AEC-Q101 and AQG324. The device supports a maximum drain-source voltage of 650 V, continuous drain current of 26 A at 25°C case temperature, and maximum power dissipation of 126 W. Junction temperature ranges from -55°C to 150°C, with a typical junction-to-case thermal resistance of 0.7°C/W per chip.
MOSFET MOD, 650V, 26A, 150DEG C, 126W ROHS COMPLIANT: YES
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 32AJ8465 |
| Product Name | Mosfet Mod, 650V, 26A, 150Deg C, 126W Rohs Compliant Onsemi |
| Package Type | TO-3 |
