onsemi FET, MOSFET Arrays NXH010P120M3F1PG

The NXH010P120M3F1PG is a silicon carbide (SiC) MOSFET half-bridge power module in an F1 package (Case 180BW) with press-fit pins, designed for high-efficiency applications such as solar inverters, electric vehicle charging, and industrial power systems. It integrates two 1200 V, 10 mΩ SiC MOSFETs with a thermistor and operates with a maximum junction temperature of 175°C and continuous drain current of 105 A at 80°C case temperature. The module supports a gate-source voltage range of +22 V to -10 V and has a thermal interface material option not applied in this variant. It is RoHS compliant and features 4800 VRMS isolation with a creepage distance of 12.7 mm.