MOSFET P-CH 20V 1.3A SOT23-3
Manufacturer: ON Semiconductor
Win Source Part Number: 1084162-NVTR01P02LT1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 400mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.3A (Ta)
Gate-Source Threshold Voltage: 1.25V @ 250μA
Max Gate Charge: 3.1nC @ 4V
Max Input Capacitance: 225pF @ 5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 220 mOhm @ 750mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
P-Channel 20V 1.3A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 1.3A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 1.3A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
MOSFET P-CH 20V 1.3A SOT23-3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NVTR01P02LT1G | 1084162-NVTR01P02LT1G | NVTR01P02LT1GOSCT-ND | NVTR01P02LT1G | NVTR01P02LT1G |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVTR01P02LT1G | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 20 volts | 20 volts | |||
| IDSS | 1300 milliamps |
